20 GHz high performance planar Si/InGaAsp-i-nphotodetector
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119085
Reference8 articles.
1. Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement
2. High-quality InGaAs/InP multiquantum-well structures on Si fabricated by direct bonding
3. High‐performance InGaAs photodetectors on Si and GaAs substrates
4. Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding
5. Silicon heterointerface photodetector
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3. Theory and Design Optimization of Energy-Efficient Hydrophobic Wafer-bonded III–V/Si Hybrid Semiconductor Optical Amplifiers;Journal of Lightwave Technology;2013-12
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5. Analytical modeling and ATLAS simulation of N+-InP/n0-In0.53Ga0.47As/p+-In0.53Ga0.47As p-i-n photodetector for optical fiber communication;Infrared Physics & Technology;2010-07
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