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Analytical modeling and ATLAS simulation of N+-InP/n0-In0.53Ga0.47As/p+-In0.53Ga0.47As p-i-n photodetector for optical fiber communication

  • Published:2010-07 Issue:4 Volume:53 Page:236-245
  • ISSN:1350-4495
  • Container-title:Infrared Physics & Technology
  • language:en
  • Short-container-title:Infrared Physics & Technology

Author:

Dwivedi A.D.D.,Mittal A.,Agrawal A.,Chakrabarti P.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. High-speed InGaAs p-i-n photodetector with planar buried heterostructure;Wang;IEEE Transactions on Electron Devices,2009

2. InGaAs-based high-performance p-i-n photodiodes;Kimukin;IEEE Photonics Technology Letters,2002

3. 50 GHz InGaAs edge-coupled pin photodetector;Wake;Electronics Letters,1991

4. 20 GHz high performance planar Si/InGaAs p-i-n photodetector;Levine;Applied Physics Letters,1997

5. High-speed InGaAs/InP-based single-photon detector with high efficiency;Xu;Applied Physics Letters,2009

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