Thermal conduction in AlxGa1−xN alloys and thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1868876
Reference40 articles.
1. Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications
2. AlGaN/GaN high electron mobility field effect transistors with low 1/f noise
3. Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN∕substrate interface
4. presented at European Microwave Week 2004;Nuttinck S.,2004
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