Diffusion of ion‐implanted In and Tl in SiO2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335260
Reference8 articles.
1. Diffusion of ion‐implanted As in SiO2
2. Diffusion of ion‐implanted Ga in SiO2
3. High-resolution Rutherford backscattering spectrometry and the analysis of very thin silicon nitride layers
4. Diffusion of Donor and Acceptor Elements in Silicon
5. Diffusion of gallium in quartz and bulk‐fused silica
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2. Raman scattering and photoluminescence in In+ and As+ ion-implanted SiO2 layers encapsulated with Si3N4;Physica B: Condensed Matter;2023-10
3. Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions;Semiconductors;2021-03
4. Effect of SiO2 surface conditions on the diffusion and interaction of co-implanted In and As atoms;Journal of Non-Crystalline Solids;2021-02
5. Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices;Semiconductors;2021-01
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