Diffusion of ion‐implanted As in SiO2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333799
Reference10 articles.
1. Diffusivity Summary of B, Ga, P, As, and Sb in SiO[sub 2]
2. Oxygen effects on arsenic diffusion in silicon dioxide
3. High-resolution Rutherford backscattering spectrometry and the analysis of very thin silicon nitride layers
4. Precise Profiles for Arsenic Implanted in Si and SiO2over a Wide Implantation Energy Range (10 keV–2.56 MeV)
5. Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four moments
Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Visible room-temperature emission and excitation photoluminescence in In- and As-co-implanted SiO2 films;Journal of Luminescence;2024-05
2. Raman scattering and photoluminescence in In+ and As+ ion-implanted SiO2 layers encapsulated with Si3N4;Physica B: Condensed Matter;2023-10
3. Influence of chemical nature of implanted atoms on photoluminescence of ion-synthesized 9R-Si hexagonal silicon;Materials Letters;2022-02
4. Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions;Semiconductors;2021-03
5. Effect of SiO2 surface conditions on the diffusion and interaction of co-implanted In and As atoms;Journal of Non-Crystalline Solids;2021-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3