Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four moments-Reference-Cited by-同舟云学术

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Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four moments

Published:1981-04 Issue: Volume:182-183 Page:223-229
ISSN:0029-554X
Container-title:Nuclear Instruments and Methods
language:en
Short-container-title:Nuclear Instruments and Methods

Author:

Jahnel F.,Ryssel H.,Prinke G.,Hoffmann K.,Müller K.,Biersack J.,Henkelmann R.

Publisher

Elsevier BV

Subject

General Medicine

Reference12 articles.

1. Projected range statistics;Gibbons,1975

2. Ion implantations range data for silicon and germanium device technologies;Smith,1977

3. Ion implantation;Ryssel,1978

4. The advanced theory of statistics;Kendall,1958

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