Evidence of phase separation in cubic InxGa1−xN epitaxial layers by resonant Raman scattering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125401
Reference18 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. Raman phonon modes of zinc blende InxGa1−xN alloy epitaxial layers
3. Green photoluminescence from cubic In0.4Ga0.6N grown by radio frequency plasma-assisted molecular beam epitaxy
4. Luminescences from localized states in InGaN epilayers
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