Green photoluminescence from cubic In0.4Ga0.6N grown by radio frequency plasma-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122136
Reference22 articles.
1. High-Quality InGaN Films Grown on GaN Films
2. Effect of hydrogen on the indium incorporation in InGaN epitaxial films
3. Solid phase immiscibility in GaInN
4. Preparation and optical properties of Ga1−xInxN thin films
5. Compositional inhomogeneity and immiscibility of a GaInN ternary alloy
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