Numerical analysis of charge transport in semi‐insulating GaAs with two contacts

Author:

Zdansky K.,Jones B. K.,Santana J.,Sloan T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. 30kV and 3kA semi-insulating GaAs photoconductive semiconductor switch;Applied Physics Letters;2008-01-28

2. Why a Real Non-Uniform Electric Field in Nuclear Detector Arrays Can Improve the Energy Resolution;IEEE Transactions on Nuclear Science;2007-08

3. The space charge relaxation behaviour of silicon diodes irradiated with 1MeV neutrons;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2004-01

4. Capacitive effects in neutron-irradiated silicon diodes;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-08

5. GaAs peculiarities related with inhomogeneities and the methods for reveal of their properties;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2001-06

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