Capacitive effects in neutron-irradiated silicon diodes
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference27 articles.
1. Physics of Semiconductor Devices;Sze,1969
2. Current-Carrier Transport with Space Charge in Semiconductors
3. Relaxation semiconductors: In theory and in practice
4. H. Queisser, In: P.N. Robson (Ed.), Solid State Devices, IOP Conference Series, Vol. 15, 1973, p. 145.
5. Electronic Basis of Switching in Amorphous Semiconductor Alloys
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