Reflection high-energy electron diffraction intensity oscillation during layer-by-layer oxidation of Si(001) surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123308
Reference15 articles.
1. 1.5 nm direct-tunneling gate oxide Si MOSFET's
2. Observation of interfacial atomic steps during silicon oxidation
3. Direct observation of the layer-by-layer growth of initial oxide layers on Si(100) surface during thermal oxidation
4. Periodic Changes in $\bf SiO_{2}/Si(111)$ Interface Structures with Progress of Thermal Oxidation
5. Atomic-step observation at buried SiO2Si(111) interfaces by scanning reflection electron microscopy
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