Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching
Author:
Affiliation:
1. Henan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, People’s Republic of China
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0007173
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