Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots-Reference-Cited by-同舟云学术

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Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots

Published:2013-02-06 Issue:14 Volume:25 Page:1987-1992
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Yoon Jung Ho,Han Jeong Hwan,Jung Ji Sim,Jeon Woojin,Kim Gun Hwan,Song Seul Ji,Seok Jun Yeong,Yoon Kyung Jean,Lee Min Hwan,Hwang Cheol Seong

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference22 articles.

1. Nanoionics-based resistive switching memories

2. The missing memristor found

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

5. Resistive switching in transition metal oxides

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