High quality, giant crystalline-Ge stripes on insulating substrate by rapid-thermal-annealing of Sn-doped amorphous-Ge in solid-liquid coexisting region-Reference-Cited by-同舟云学术

High quality, giant crystalline-Ge stripes on insulating substrate by rapid-thermal-annealing of Sn-doped amorphous-Ge in solid-liquid coexisting region

Published:2015-06 Issue:6 Volume:5 Page:067112
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Matsumura Ryo,Kai Yuki,Chikita Hironori,Sadoh Taizoh,Miyao Masanobu

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/6/1.4922266.pdf?itemId=/content/aip/journal/adva/5/6/10.1063/1.4922266&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference21 articles.

1. High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure

2. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

3. Ge-on-Si optoelectronics

4. Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators

5. Solid-phase crystallization of amorphous SiGe films deposited by LPCVD on SiO2 and glass

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2. Single grain growth of Si thin film on insulating substrate by limited region aluminum induced crystallization;Materials Letters;2019-10

3. Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization;Applied Physics Letters;2017-01-16