Deep defects and the attempt to escape frequency in organic photovoltaic materials-Reference-Cited by-同舟云学术

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Deep defects and the attempt to escape frequency in organic photovoltaic materials

Published:2015-11-16 Issue:20 Volume:107 Page:203302
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Carr John A.¹,Elshobaki Moneim²³^ORCID,Chaudhary Sumit²⁴

Affiliation:

1. NASA–Marshall Space Flight Center, Huntsville, Alabama 35812, USA

2. Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011, USA

3. Department of Physics, Mansoura University, Mansoura 3551 6, Egypt

4. Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936160

Reference22 articles.

1. The identification, characterization and mitigation of defect states in organic photovoltaic devices: a review and outlook

2. Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2based heterojunctions

3. Midgap states ina‐Si:H anda‐SiGe:Hp‐i‐nsolar cells and Schottky junctions by capacitance techniques

4. Electronic Properties of Polymer-Fullerene Solar Cells

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