Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications-Reference-Cited by-同舟云学术

Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications

Published:2019-08-14 Issue:6 Volume:126 Page:064101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lin Edward L.¹^ORCID,Posadas Agham B.²,Zheng Lu²,Elliott Ortmann J.²,Abel Stefan³^ORCID,Fompeyrine Jean³,Lai Keji²^ORCID,Demkov Alexander A.²^ORCID,Ekerdt John G.¹^ORCID

Affiliation:

1. Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712, USA

2. Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA

3. IBM Research—Zürich, CH-8803 Rüschlikon, Switzerland

Funder

National Science Foundation

Directorate for Mathematical and Physical Sciences

European Commission

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5087571

Reference42 articles.

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3. The Quantum Metal Ferroelectric Field-Effect Transistor

4. BaTiO3/SrTiO3 heterostructures for ferroelectric field effect transistors

5. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

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