Subject
General Physics and Astronomy
Reference60 articles.
1. Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
2. C. Rossel, A. Dimoulas, A. Tapponier, D. Caimi, D. J. Webb, C. Andersson, M. Sousa, C. Marchiori, H. Siegwart, J. Fomperyrine, and R. Germann, Proceedings of ESSDERC 2008 (2008), p. 79.
3. Ge p-MOSFETs With Scaled ALD $\hbox{La}_{2} \hbox{O}_{3}/\hbox{ZrO}_{2}$ Gate Dielectrics
4. Germanium FETs and capacitors with rare earth CeO2/HfO2 gates
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