Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

Author:

Ji Yanfeng1,Pan Chengbin1ORCID,Zhang Meiyun2,Long Shibing2,Lian Xiaojuan3,Miao Feng3ORCID,Hui Fei1,Shi Yuanyuan1,Larcher Luca4,Wu Ernest5,Lanza Mario1ORCID

Affiliation:

1. Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123, China

2. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

3. National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

4. DISMI, Università di Modena e Reggio Emilia, 42122 Reggio Emilia, Italy

5. IBM Research Division, Essex Junction, Vermont 05452, USA

Funder

Major State Basic Research Development Program of China

Priority Academic Program Development of Jiangsu Higher Education Institutions

Young 1000 Talent Program of China

Young 973 National Program of the Chinese Ministry of Science and Technology

National Natural Science Foundation of China (NSFC)

National Nanotechnology Center (NANOTEC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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