Direct determination of the valence‐band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107418
Reference7 articles.
1. Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x‐ray photoemission spectroscopy
2. Measurement of semiconductor heterojunction band discontinuities by x‐ray photoemission spectroscopy
3. Surface photovoltage and band bending at metal/GaAs interfaces: A contact potential difference and photoemission spectroscopy study
4. Theoretical study of band offsets at semiconductor interfaces
5. Buildup of III-V-compound semiconductor heterojunctions: Structural and electronic properties of monolayer-thick III-V overlayers on III-V substrates
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