A topological point defect regulates the evolution of extended defects in irradiated silicon
Author:
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3585656
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1. Theoretical studies of icosahedral C60 and some related species
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4. Role of the bond defect for structural transformations between crystalline and amorphous silicon: A molecular-dynamics study
5. Formation and annihilation of a bond defect in silicon: Anab initioquantum-mechanical characterization
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