Diffusion of point defects in crystalline silicon using the kinetic activation-relaxation technique method-Reference-Cited by-同舟云学术

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Diffusion of point defects in crystalline silicon using the kinetic activation-relaxation technique method

Published:2015-06-16 Issue:22 Volume:91 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Trochet Mickaël,Béland Laurent Karim,Joly Jean-François,Brommer Peter,Mousseau Normand

Funder

Canada Research Chairs

Natural Sciences and Engineering Research Council of Canada

Fonds Québécois de la Recherche sur la Nature et les Technologies

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.91.224106/fulltext

Reference35 articles.

1. Surface self-diffusion on Pt(001) by an atomic exchange mechanism

2. Long time scale kinetic Monte Carlo simulations without lattice approximation and predefined event table

3. From compact point defects to extended structures in silicon

4. A topological point defect regulates the evolution of extended defects in irradiated silicon

5. Extended Point Defects in Crystalline Materials: Ge and Si

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