Structure and composition of interfacial silicon oxide layer in chemical vapor deposited Y2O3‐SiO2bilayer dielectrics for metal‐insulator‐semiconductor devices-Reference-Cited by-同舟云学术

Structure and composition of interfacial silicon oxide layer in chemical vapor deposited Y2O3‐SiO2bilayer dielectrics for metal‐insulator‐semiconductor devices

Published:1994-10 Issue:7 Volume:76 Page:4215-4224
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sharma R. N.,Rastogi A. C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.357377

Reference35 articles.

1. Ultra-thin Ta2O5dielectric film for high-speed bipolar memories

2. Promising storage capacitor structures with thin Ta/sub 2/O/sub 5/ film for low-power high-density DRAMs

3. Some properties of crystallized tantalum pentoxide thin films on silicon

4. Quadruply self-aligned stacked high-capacitance RAM using Ta2O5high-density VLSI dynamic memory

5. Electrical characteristics of metal‐insulator‐semiconductor diodes with ZrO2/SiO2dielectric films

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