High red emission intensity of Eu:Y2O3 films grown on Si(1 0 0)/Si(1 1 1) by electron beam evaporation-Reference-Cited by-同舟云学术

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High red emission intensity of Eu:Y2O3 films grown on Si(1 0 0)/Si(1 1 1) by electron beam evaporation

Published:2014-04 Issue: Volume:148 Page:186-191
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Rivera V.A.G.,Ferri F.A.,Clabel H. J.L.,Pereira-da-Silva M.A.,Nunes L.A.O.,Li M. Siu,Marega E.

Funder

Brazilian agencies FAPESP

CNPq under CEPOF/INOF

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference35 articles.

1. Structure and composition of interfacial silicon oxide layer in chemical vapor deposited Y2O3‐SiO2bilayer dielectrics for metal‐insulator‐semiconductor devices

2. A refinement of the crystal structure of yttria

3. Plasticity of monocrystalline yttrium oxide (Y 2O3) at 0.45 Tm

4. Phosphors based on rare-earths, a new era in fluorescent lighting

5. Rare earth phosphors: fundamentals and applications

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4. Activation energy and its fluctuations at grain boundaries of Er3+:BaTiO3 perovskite thin films: Effect of doping concentration and annealing temperature;Vacuum;2021-12

5. Investigation of the phase composition and photoluminescence of CVD (YxGdyEuz)2O3 films on Si substrates after annealing in the air;Journal of Luminescence;2021-05

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