Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118549
Reference14 articles.
1. Fabrication of multiple wavelength lasers in GaAs-AlGaAs structures using a one-step spatially controlled quantum-well intermixing technique
2. Single and double quantum well lasers with a monolithically integrated passive section
3. Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing
4. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
5. Large energy shifts in GaAs‐AlGaAs quantum wells by proton irradiation‐induced intermixing
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