Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation-Reference-Cited by-同舟云学术

Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation

Published:2005-06-28 Issue:2 Volume:82 Page:305-308
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Qu Y.,Zhang J.X.,Uddin A.,Liu C.Y.,Yuan S.,Chan M.C.Y.,Bo B.,Liu G.,Jiang H.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-005-3294-1.pdf

Reference30 articles.

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