Size-tunable strain engineering in Ge nanocrystals embedded within SiO2 and Si3N4-Reference-Cited by-同舟云学术

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Size-tunable strain engineering in Ge nanocrystals embedded within SiO2 and Si3N4

Published:2014-10-27 Issue:17 Volume:105 Page:172106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liao P. H.¹,Hsu T. C.¹,Chen K. H.¹,Cheng T. H.²,Hsu T. M.²,Wang C. C.¹,George T.³,Li P. W.¹

Affiliation:

1. Department of Electrical Engineering and Center for Nano Science and Technology, National Central University, ChungLi 32001, Taiwan

2. Department of Physics, National Central University, ChungLi 32001, Taiwan

3. Private Consultancy, Arcadia, California 91007, USA

Funder

Asian Office of Aerospace Research and Development

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4900942

Reference36 articles.

1. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

2. Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors

3. High-performance Ge-on-Si photodetectors

4. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

5. Substrate-strained silicon technology: process integration [CMOS technology]

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1. Optimizing photocurrent intensity in layered SiGe heterostructures;Semiconductor Science and Technology;2024-09-09

2. Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices;Nanomaterials;2021-10-16

3. Electronic properties and tunability of the hexagonal SiGe alloys;Applied Physics Letters;2021-04-26

4. Photon absorption and scattering of Ge nanocrystals embedded in SiO2 prepared by co-sputtering;Physica B: Condensed Matter;2021-01

5. Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime;Nano Futures;2020-04-14

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