Correlated reduction in micropipe cross sections in SiC growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2998572
Reference27 articles.
1. Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes
2. Progress in the industrial production of SiC substrates for semiconductor devices
3. Synchrotron radiography and x-ray topography studies of hexagonal habitus SiC bulk crystals
4. Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H–SiC Schottky diodes
5. Defect reduction in sublimation grown SiC bulk crystals
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