Capsule-like voids in SiC single crystal: Phase contrast imaging and computer simulations-Reference-Cited by-同舟云学术

Capsule-like voids in SiC single crystal: Phase contrast imaging and computer simulations

Published:2014-09 Issue:9 Volume:4 Page:097134
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Kohn V. G.¹,Argunova T. S.²,Je J. H.³

Affiliation:

1. National Research Center “Kurchatov Institute”, 123182, Moscow, Russia

2. Ioffe Physical-Technical Institute, RAS, 194021 St. Petersburg, Russia

3. X-ray Imaging Center, Department of Materials Science and Engineering, Pohang University of Science and Technology, San 31 Hyoja-dong, Namku, 790-784 Pohang, Republic of Korea

Funder

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/4/9/1.4896512.pdf?itemId=/content/aip/journal/adva/4/9/10.1063/1.4896512&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference26 articles.

1. Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications

2. Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

3. The mechanism of micropipe nucleation at inclusions in silicon carbide

4. Micropipes: Hollow Tubes in Silicon Carbide

5. Hexagonal voids and the formation of micropipes during SiC sublimation growth

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