Rapid thermal anneal and furnace anneal of beryllium‐implanted Ga0.47In0.53As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337058
Reference13 articles.
1. Ion implantation of Be in In0.53Ga0.47As
2. Comparison of ion implanted Be and Cd as p-type dopants in Ga0.47In0.53As
3. Beryllium implantation doping of InGaAs
4. Be‐implanted In0.53Ga0.47As diodes with ideal forward current‐voltage characteristics
5. GaInAs junction FET with InP buffer layer prepared by selective ion implantation of Be and rapid thermal annealing
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2. Laser and Thermal Annealing Effects on the Optical Properties of n-GaAs [100] Crystals: Application to Its Schottky Diodes;physica status solidi (a);2000-10
3. High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+p junction devices;Journal of Applied Physics;2000-04
4. Magnesium-doped InGaAs using (C2H5C5H4)2Mg: application to InP-based HBTs;Journal of Crystal Growth;1997-01
5. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997
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