Ion implantation of Be in In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93163
Reference12 articles.
1. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
2. Beryllium‐ion implantation in InP and In1−xGaxAsyP1−y
3. Uniform‐carrier‐concentrationp‐type layers in GaAs produced by beryllium ion implantation
4. Be‐implanted 1.3‐μm InGaAsP avalanche photodetectors
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion implantation and dry etching characteristics of InGaAsP (λ=1.3 μm);Journal of Applied Physics;1993-08
2. Doping of In0.53Ga0.47As and In0.52Al0.48As by Si+and Be+ion implantation;Journal of Applied Physics;1992-01
3. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
4. Shallowp+layer in In0.53Ga0.47As using P/Be and As/Be co‐implant;Journal of Applied Physics;1988-05
5. Dopant redistribution and crystalline damage removal during rapid thermal annealing of Be and Mg implants in Ga0.47In0.53As;Journal of Crystal Growth;1987-11
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