Composition dependence of room temperature 1.54 μm Er3+ luminescence from erbium-doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

Composition dependence of room temperature 1.54 μm Er3+ luminescence from erbium-doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

Published:1998-03-02 Issue:9 Volume:72 Page:1092-1094
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shin Jung H.,Kim Mun-Jun,Seo Se-young,Lee Choochon

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.120974

Reference13 articles.

1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

2. Room‐temperature electroluminescence from Er‐doped crystalline Si

3. Electroluminescence of erbium–oxygen‐doped silicon diodes grown by molecular beam epitaxy

4. Incorporation and optical activation of erbium in silicon using molecular beam epitaxy

5. Growth of Er‐doped silicon using metalorganics by plasma‐enhanced chemical vapor deposition

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