Incorporation and optical activation of erbium in silicon using molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361136
Reference19 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
3. Evaluation of erbium‐doped silicon for optoelectronic applications
4. Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon Films
5. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon
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1. Optical performance of thin films produced by the pulsed laser deposition of SiAlON and Er targets;Applied Surface Science;2015-05
2. Optically active Er3+ centers in Si/Si1 − x Ge x structures under optical pumping;Bulletin of the Russian Academy of Sciences: Physics;2009-01
3. Crystal lattice defects in MBE grown Si layers highly doped with Er;physica status solidi (a);2008-02
4. Silicon as an emissive optical medium;Laser & Photonics Review;2007-12-20
5. Observation of the population inversion of erbium ion states in Si/Si1−xGex:Er/Si structures under optical excitation;Optical Materials;2006-05
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