Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3236538
Reference16 articles.
1. Giant electric fields in unstrained GaN single quantum wells
2. Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure
3. Luminescence efficiency of InGaN multiple-quantum-well ultravioletlight-emitting diodes
4. Reduction of efficiency droop in InGaN-based blue LEDs
5. Growth of p-type and n-type m-plane GaN by molecular beam epitaxy
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