Luminescence efficiency of InGaN multiple-quantum-well ultravioletlight-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1765207
Reference13 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
3. Full-Color Fluorescent Display Devices Using a Near-UV Light-Emitting Diode
4. White light from InGaN/conjugated polymer hybrid light-emitting diodes
5. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
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1. Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes;Applied Sciences;2018-11-26
2. Tandem dual-functioning multiple-quantum-well diodes for a self-powered light source;Optics Letters;2018-07-27
3. Nitride LEDs based on quantum wells and quantum dots;Nitride Semiconductor Light-Emitting Diodes (LEDs);2018
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5. Indium Tin Oxide-Free Transparent Conductive Electrode for GaN-Based Ultraviolet Light-Emitting Diodes;ACS Applied Materials & Interfaces;2015-04-13
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