Etching effect on metal‐organic molecular‐beam epitaxy growth of GaSb using triethylgallium and trisdimethylaminoantimony
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112142
Reference10 articles.
1. Reduction of threshold current density of 2.2μm GaInAsSb/AlGaAsSb injection lasers
2. Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy
3. MOMBE growth characteristics of antimonide compounds
4. Study of the compositional control of the antimonide alloys InGaSb and GaAsSb grown by metalorganic molecular beam epitaxy
5. MOMBE growth of GaSb and InAsSb using triethylstibine and triethylarsine
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1. Growth of InMnAsSb/InSb Heterostructures with Mid-Infrared-Light-Induced Ferromagnetic Properties;Japanese Journal of Applied Physics;2002-02-28
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3. Magnetic and optical properties of Mn-including InAs dots grown by metalorganic molecular beam epitaxy;Journal of Crystal Growth;2000-12
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5. Metalorganic molecular beam epitaxy/etching of III–V semiconductors;Applied Surface Science;1998-06
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