Reduction of threshold current density of 2.2μm GaInAsSb/AlGaAsSb injection lasers-Reference-Cited by-同舟云学术

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Reduction of threshold current density of 2.2μm GaInAsSb/AlGaAsSb injection lasers

Published:1986 Issue:19 Volume:22 Page:992
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Caneau C.,Srivastava A.K.,Dentai A.G.,Zyskind J.L.,Burrus C.A.,Pollack M.A.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19860678?crawler=true&mimetype=application/pdf

Reference7 articles.

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First Approach to an AlSb Layer from the Single-Source Precursors [Et2AlSb(SiMe3)2]2 and (iBu2AlSb(SiMe3)2]2;Chemical Vapor Deposition;1999-08

2. Long Wavelength (λ > 2 μm) Semiconductor Lasers;Semiconductor Lasers II;1999

3. MOMBE and characterization of InAs and (Al,Ga)Sb;Journal of Crystal Growth;1998-06

4. 2.5 µm light-emitting diodes in InAs0.36Sb0.20P0.44/InAs for HF detection;IEE Proceedings - Optoelectronics;1997-10-01

5. The physics and technology of gallium antimonide: An emerging optoelectronic material;Journal of Applied Physics;1997-05

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