MOMBE and characterization of InAs and (Al,Ga)Sb
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Growth of GaSb by MOVPE; Optimization of electrical quality with respect to growth rate, pressure, temperature and ratio
2. Reduction of threshold current density of 2.2μm GaInAsSb/AlGaAsSb injection lasers
3. Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy
4. MOMBE (Metalorganic Molecular Beam Epitaxy) growth of InGaSb on GaSb
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology;MATEC Web of Conferences;2017
2. Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition;Advances in Materials Science and Engineering;2010
3. Al-Ga-Sb (Aluminium-Gallium-Antimony);Non-Ferrous Metal Systems. Part 1;2006
4. First Approach to an AlSb Layer from the Single-Source Precursors [Et2AlSb(SiMe3)2]2 and (iBu2AlSb(SiMe3)2]2;Chemical Vapor Deposition;1999-08
5. Interface Science, Its Impact on Modern Semiconductor Technology and Device Physics;physica status solidi (a);1999-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3