Growth of GaSb by MOVPE; Optimization of electrical quality with respect to growth rate, pressure, temperature and ratio
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Proc. 11th Intern. Symp. on GaAs and Related Compounds;McLean,1985
2. A photoluminescence and Hall‐effect study of GaSb grown by molecular‐beam epitaxy
3. The Use of Metalorganics in the Preparation of Semiconductor Materials: VII . Gallium Antimonide
4. The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimony
5. Growth of GaSb by MOVPE
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