Growth and characterization of InMnAsSb for the sensor-memory device application at long wavelength region-Reference-Cited by-同舟云学术

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Growth and characterization of InMnAsSb for the sensor-memory device application at long wavelength region

Published:2001-07 Issue: Volume:227-228 Page:614-618
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhou Y.K,Asahi H,Okumura S,Kanamura M,Asakura J,Asami K,Nakajima M,Harima H,Gonda S

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Light-induced ferromagnetism in III-V-based diluted magnetic semiconductor heterostructures

2. Ferromagnetic Order Induced by Photogenerated Carriers in Magnetic III-V Semiconductor Heterostructures of (In,Mn)As/GaSb

3. Etching effect on metal‐organic molecular‐beam epitaxy growth of GaSb using triethylgallium and trisdimethylaminoantimony

4. Formation of nanoscale ferromagnetic MnAs crystallites in low-temperature grown GaAs

5. Observation of coupled LO phonon-intersubband plasmon modes in GaSb/InAs quantum wells by resonant Raman scattering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and properties of ferromagnetic In1−Mn Sb alloys;Physica E: Low-dimensional Systems and Nanostructures;2004-01

2. In1−xMnxSb—a narrow-gap ferromagnetic semiconductor;Applied Physics Letters;2003-06-16

3. Photo-carrier-induced magnetism in (In,Mn)As/GaSb magnetic alloy semiconductor heterostructures;Physica E: Low-dimensional Systems and Nanostructures;2002-03

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