Reactive ion etch-induced effects on the near-band-edge luminescence in GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124101
Reference17 articles.
1. Microwave performance of 0.25 [micro sign]m doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
2. Highly anisotropic photoenhanced wet etching of n-type GaN
3. Comparison of dry etch techniques for GaN
4. Reactive ion etching of GaN layers using
5. Low-energy ion damage in semiconductors: A progress report
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3. A comparative study on GaN luminescence under/after inductively coupled plasma exposure;Philosophical Magazine Letters;2015-03-04
4. Damage Analysis of n-GaN Crystal Etched with He and N2Plasmas;Japanese Journal of Applied Physics;2013-01-01
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