In-situ photoluminescence monitoring of GaN in plasma exposure
Author:
Affiliation:
1. College of Engineering, Chubu University, Kasugai, Japan
2. Department of Physics, China Jiliang University, Hangzhou, People’s Republic of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference22 articles.
1. S. Nakamura and G. Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers (Springer, Berlin, 1997).
2. B. Gil, Group III Nitride Semiconductor Compounds (Oxford Science, 1998).
3. Radiation enhanced diffusion of low energy ion‐induced damage
4. Channeling and diffusion in dry-etch damage
5. Reactive ion etch-induced effects on the near-band-edge luminescence in GaN
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