Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1376401
Reference13 articles.
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3. Partial screening of internal electric fields in strained piezoelectric quantum well lasers: Implications for optoelectronic integration
4. Electrooptic modulation in polar growth axis InGaAs/GaAs multiple quantum wells
5. Strain‐induced two‐dimensional electron gas in [111] growth‐axis strained‐layer structures
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1. Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs;Journal of Physics D: Applied Physics;2022-07-11
2. Improved efficiency of InGaN/GaN light-emitting diodes with perpendicular magnetic field gradients;Optics Express;2019-12-03
3. Magnetically enhanced luminescence of CdSe/ZnS quantum dot light-emitting diodes using circular ferromagnetic Co/Pt multilayer disks;Optics Express;2019-12-02
4. Long-term photoconductivity decay in n-InGaAs/GaAs heterostructures with coupled quantum wells under band-to-band excitation;Semiconductors;2013-01
5. Guide to the Literature of Piezoelectricity and Pyroelectricity. 21;Ferroelectrics;2004-01
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