Investigation of the electrical degradation of silicon Schottky contacts due to mercury contamination
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102052
Reference5 articles.
1. Capacitance-Voltage Measurements with a Mercury-Silicon Diode
2. Experiments on Mercury‐Silicon Surface Barriers
3. On the determination of minority carrier lifetime from the transient response of an MOS capacitor
4. Ueber Siliciumlegirungen und Siliciumarsenmetalle
5. Depletion Capacitance and Diffusion Potential of Gallium Phosphide Schottky‐Barrier Diodes
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1. Electrical Properties of Metals in Si and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
2. Mercury Probe;Encyclopedia of Plasma Technology;2016-12-12
3. Capacitance-Voltage (C-V) Characterization of Semiconductors;Characterization of Materials;2012-10-12
4. Electrical Properties of Junctions between Hg and Si(111) Surfaces Functionalized with Short-Chain Alkyls;The Journal of Physical Chemistry C;2007-09-01
5. Using surface charge analysis to characterize the radiation response of Si/SiO/sub 2/ structures;IEEE Transactions on Nuclear Science;2004-12
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