Author:
Stacey J.W.,Schrimpf R.D.,Fleetwood D.M.,Holmes K.C.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
5 articles.
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1. Study of oxide-silicon interface state generation and annihilation by rapid thermal processing;Japanese Journal of Applied Physics;2015-07-01
2. Gamma-ray irradiation effects on the interface states of MIS structures;Sensors and Actuators A: Physical;2009-04
3. Effects of γ-ray irradiation on the C–V and G/ω–V characteristics of Al/SiO2/p-Si (MIS) structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-03
4. Effects of beta-ray irradiation on the C–V and G/ω–V characteristics of Au/SiO2/n-Si (MOS) structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-01
5. Electrical characteristics of 60Co γ-ray irradiated MIS Schottky diodes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-11