Benefit of H2 surface pretreatment for 4H-SiC oxynitridation using N2O and rapid thermal processing steps
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3077016
Reference20 articles.
1. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype
2. Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances
3. Bonding at theSiC−SiO2Interface and the Effects of Nitrogen and Hydrogen
4. Intrinsic SiC/SiO2 Interface States
5. Defects inSiO2as the possible origin of near interface traps in theSiC∕SiO2system: A systematic theoretical study
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1. Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO 2 interfaces;Applied Surface Science;2017-06
2. Al-implanted on-axis 4H-SiC MOSFETs;Semiconductor Science and Technology;2017-01-30
3. The Current Status and the Future Prospects of Surface Passivation in 4H-SiC Transistors;IEEE Transactions on Device and Materials Reliability;2016-09
4. Passivation of SiO2/4H–SiC interface defects via electron cyclotron resonance hydrogen–nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing;Applied Surface Science;2016-02
5. 5 MeV Proton and 15 MeV Electron Radiation Effects Study on 4H-SiC nMOSFET Electrical Parameters;IEEE Transactions on Nuclear Science;2014-08
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