Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO 2 interfaces-Reference-Cited by-同舟云学术

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Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO 2 interfaces

Published:2017-06 Issue: Volume:406 Page:128-135
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Huang Jianqiu,Tea Eric,Li Guanchen,Hin Celine

Funder

Air Force with program name: Aerospace Materials for Extreme Environment

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference37 articles.

1. Technology and reliability constrained future copper interconnects -Part II L performance implications;Kapur;IEEE Trans. Electron Devices,2002

2. Performance modeling of low-k/Cu interconnects for 320-nm-node and beyond;Tada;IEEE Trans. Electron Devices,2009

3. Time dependent dielectric breakdown physics −models revisited;McPherson;Microelectron. Reliab.,2012

4. Dielectric breakdown mechanisms in gate oxides;Lombardo;J. Appl. Phys.,2005

5. Ultra-thin dielectric breakdown in devices and circuits: a brief review;Ho;Microelectron. Reliab.,2015

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