Direct observation of grain boundary effects in polycrystalline silicon thin‐film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93193
Reference16 articles.
1. Field-effects in polycrystalline-silicon films
2. Thin film MOSFET’s fabricated in laser‐annealed polycrystalline silicon
3. Ring oscillators fabricated in laser-annealed silicon-on-insulator
4. Effects of grain boundaries on laser crystallized poly-Si MOSFET's
5. Annular grain structures in pulsed laser recrystallized Si on amorphous insulators
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Switching characteristics of multigrain (polycrystalline silicon) barrier devices;IEEE Transactions on Electron Devices;1991
2. References;Thin Films by Chemical Vapour Deposition;1990
3. Versatile polycrystalline silicon transistor/switching structure;Electronics Letters;1989
4. Enhanced electron‐beam‐induced current contrast of grain boundaries in silicon‐on‐insulator films;Journal of Applied Physics;1987-06-15
5. Transient annealing of semiconductors by laser, electron beam and radiant heating techniques;Reports on Progress in Physics;1985-08-01
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