Improved thermal stability of N-doped Sb materials for high-speed phase change memory application-Reference-Cited by-同舟云学术

Improved thermal stability of N-doped Sb materials for high-speed phase change memory application

Published:2016-05-30 Issue:22 Volume:108 Page:223103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hu Yifeng¹,Zhu Xiaoqin¹,Zou Hua¹^ORCID,Zhang Jianhao¹^ORCID,Yuan Li¹,Xue Jianzhong¹,Sui Yongxing¹,Wu Weihua¹,Song Sannian²,Song Zhitang²

Affiliation:

1. School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, China

2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Funder

Open Fund of State Key Latorabory of Functional Materials for Informatics

Scientific Research Fund Project of Jiangsu University of Technology

Basic Research Program of Jiangsu Education Department

Natural Science Foundation of Jiangsu Province (Jiangsu Natural Science Foundation)

Changzhou Science and Technology Bureau (CZST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4953194

Reference24 articles.

1. Low‐Temperature Transport in Crystalline Ge 1 Sb 2 Te 4

2. Study on phase change properties of binary GaSb doped Sb–Se film

3. The role of contact resistance in GeTe and Ge2Sb2Te5 nanowire phase change memory reset switching current

4. Nitrogen-Doped Ge10Sb90 Phase Change Thin Films for High-Temperature Data Retention and High-Speed Application

5. Titanium-induced structure modification for thermal stability enhancement of a GeTeTi phase change material

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