Sensitivity analysis of laterally resolved free carrier absorption determination of electronic transport properties of silicon wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2840061
Reference34 articles.
1. Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity
2. Nondestructive technique to measure bulk lifetime and surface recombination velocities at the two surfaces by infrared absorption due to pulsed optical excitation
3. Injection‐level‐dependent recombination velocities at the Si‐SiO2 interface for various dopant concentrations
4. Simultaneous extraction of bulk lifetime and surface recombination velocities from free carrier absorption transients
5. Carrier lifetime measurements using free carrier absorption transients. I. Principle and injection dependence
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1. Uniqueness of parameter estimates obtained from fitting free carrier absorption data of silicon wafers;AIP Advances;2021-10-01
2. Influence of Reflectance on Determination of Free Carrier Absorption of Silicon Wafer;International Journal of Thermophysics;2014-11-01
3. Time domain theory of the electronic transport property of semiconductors measured by means of square-wave-modulated free carrier absorption technique;Acta Physica Sinica;2014
4. Characterization of Silicon Wafers with Combined Photocarrier Radiometry and Free Carrier Absorption;International Journal of Thermophysics;2013-09
5. Carrier Diffusivity Measurement in Silicon Wafers Using Free Carrier Absorption;International Journal of Thermophysics;2013-05-24
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