Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing-Reference-Cited by-同舟云学术

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Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

Published:2002-04-15 Issue:8 Volume:91 Page:5203-5207
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Polyakov A. Y.,Smirnov N. B.,Govorkov A. V.,Kim J.,Luo B.,Mehandru R.,Ren F.,Lee K. P.,Pearton S. J.,Osinsky A. V.,Norris P. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1465119

Reference9 articles.

1. Aging of InGaN/AlGaN/GaN Light-Emitting Diodes

2. “Blue” temperature-induced shift and band-tail emission in InGaN-based light sources

3. GaN: Processing, defects, and devices

4. Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy

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